1 to-220f item symbol ratings unit drain-source voltage v ds 900 v dsx *5 900 continuous drain current i d 3.7 pulsed drain current i d(puls] 14.8 gate-source voltage v gs 30 repetitive or non-repetitive i ar *2 3.7 maximum avalanche energy e as *1 171.1 maximum drain-source dv/dt dv ds /dt *4 40 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 2.16 tc=25 c 43 operating and storage t ch +150 temperature range t stg isolation voltage v iso *6 2000 electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2sK3699-01mr fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =900v v gs =0v v ds =720v v gs =0v v gs =30v i d =1.85a v gs =10v i d =1.85a v ds =25v v cc =600v i d =1.85a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 2.907 58.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =450v i d =3.7a v gs =10v l=22.9mh t ch =25c i f =3.7a v gs =0v t ch =25c i f =3.7a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c vrms 900 3.0 5.0 25 250 100 3.31 4.30 24 430 650 60 90 3.5 5 19 29 711 32 48 17 26 16.5 24.8 6.4 9.6 3.7 5.6 3.7 0.9 1.50 1.0 4.0 -55 to +150 outline drawings [mm] equivalent circuit schematic super f ap-g series *3 i f -i d , -di/dt=50a/s, vcc bv dss , tch 150c = < = < = < gate(g) source(s) drain(d) 200305 *4 vds 900v *5 v gs =-30v *6 f=60hz, t=60sec. < = *1 l=22.9mh, vcc=90v, tch=25c see to avalanche energy graph *2 tch 150c = <
2 characteristics 2sK3699-01mr fuji power mosfet 0 5 10 15 20 25 0 1 2 3 4 5 20v 7.0v 10v 6.5v 6.0v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c vgs=5.5v 012345678910 0.1 1 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.1 1 10 1 10 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 012345 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 7.0v 6.5v rds(on) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 6.0v vgs=5.5v -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=1.85a,vgs=10v 0 25 50 75 100 125 150 0 10 20 30 40 50 60 allowable power dissipation pd=f(tc) pd [w] tc [ c]
3 2sK3699-01mr fuji power mosfet -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250a vgs(th) [v] tch [ c] 0 5 10 15 20 25 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs=f(qg):id=3.7a,tch=25 c vgs [v] 720v 450v vcc= 180v 10 0 10 1 10 2 10 -3 10 -2 10 -1 10 0 c [nf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.1 1 10 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 typical switching characteristics vs. id t=f(id):vcc=600v,vgs=10v,rg=10 ? td(on) tr tf td(off) t [ns] id [a] 0 255075100125150 0 50 100 150 200 250 300 350 i as =2a i as =3.7a i as =3a e as [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(as)=f(starting tch):vcc=90v
4 2sK3699-01mr fuji power mosfet http://www.fujielectric.co.jp/denshi/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=90v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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